LT-GaAs

LT-GaAs We offer LT-GaAs for THz or detector and other application. 2" LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜0.5ps... More

LT-GaAs We offer LT-GaAs for THz or detector and other application. 2" LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜0.5ps Dislocation Density <1x106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C Annealed for ~ 10 minutes at 600 C after growth LT-GaAs Introduction: Low-temperature grown GaAs is the most widely used material for the fabrication of photoconductive THz emitters or detectors. Its unique properties are good carrier mobility, high dark resistivity, and subpicosecond carrier lifetimes. GaAs grown by molecular beam epitaxy (MBE) at temperatures lower than 300 °C (LT GaAs) presents a 1%–2% arsenic excess which depends on the growth temperature Tgand on the arsenic pressure during the deposi Less